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| 2SC4789 Silicon NPN Triple Diffused Application Character Display Horizontal Deflection Output TO-3PL Features * High speed switching time: 0.5 s max * High breakdown voltage, high current: VCBO = 1500 V, IC = 25 A * Suitable for large size CRT Display 1 1. Base 2. Collector 3. Emitter 3 2 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC ic(surge) PC*1 Tj Tstg Rating 1500 800 6 25 30 150 150 -55 to +150 Unit V V V A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SC4789 Electrical Characteristics (Ta = 25C) Item Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CEO V(BR)EBO ICES hFE VCE(sat) VBE(sat) tf Min 800 Typ -- Max -- Unit V Test Conditions IC = 10 mA, RBE = IE = 10 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 16 A, IB = 4 A IC = 16 A, IB = 4 A ICP = 10 A, IB1 = 2 A IB2 = -3 A, fH = 31.5 kHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 6 -- -- V -------------------------------------------------------------------------------------- -- -- 500 A -------------------------------------------------------------------------------------- DC current transfer ratio 10 -- 33 -- -------------------------------------------------------------------------------------- Collector to emitter saturation voltage Base to emitter saturation voltage Fall time -- -- 5 V -------------------------------------------------------------------------------------- -- -- 1.5 V -------------------------------------------------------------------------------------- -- -- 0.5 s -------------------------------------------------------------------------------------- Maximum Collector Power Dissipation Curve Collector Power Dissipation Pc (W) 200 I C (A) 40 Area of Safe Operation 150 30 (100 V, 30 A) 100 Collector Current 20 50 10 (800 V, 4 A) 0.5 mA 0 50 100 Case Temperature 150 Tc (C) 200 0 500 1000 1500 2000 Collector to Emitter Voltage VCE (V) 2SC4789 Typical Output Characteristics 20 I C (A) 2.0 A Pc DC Current Transfer Ratio vs. Collector Current 100 DC Current Transfer Ratio Collector Current 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A 0 h FE 1.8 A = 15 VCE = 5 V 50 75 C W 20 10 5 2 1 0.1 0.2 25 C Tc = -25 C 10 0.6 A 0.4 A 0.2 A Tc = 25 C 0 IB = 0 5 10 Collector to Emitter Voltage V CE (V) 0.5 1 2 5 I C (A) 10 20 Collector Current Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 2 Base to Emitter Saturation Voltage V BE(sat) (V) I C / IB = 4 1 0.5 75 C 0.2 0.1 0.05 Tc = -25 C 25 C Base to Emitter Saturation Voltage vs. Collector Current 10 I C / IB = 4 5 2 1 0.5 Tc = -25 C 25 C 75 C 0.2 0.1 0.1 0.2 0.02 0.1 0.2 0.5 1 2 5 10 Collector Current I C (A) 20 0.5 1 2 5 I C (A) 10 20 Collector Current 2SC4789 Collector to Emitter Saturation Voltage vs. Base Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10 Tc = 25 C IC = 6 A 8A 5 10 A 12 A 0 0.1 0.2 0.5 1 Base Current 2 5 I B (A) 10 |
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